Definitions from Wikipedia (High-electron-mobility transistor)

▸ noun:  A high-electron-mobility transistor (HEMT or HEM FET), also known as heterostructure FET or modulation-doped FET, is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of a doped region (as is generally the case for a MOSFET).


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